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High-concentration ozone gas generator installed in a semiconductor fab process bay
Ozone Gas Generators · O₃ Gas

High-Concentration Ozone Gas
Generators for Semiconductor Fabrication Processes

Inquivix Technologies ozone gas generators deliver high-concentration ozone at up to 300 g O₃/Nm³ in the gas phase, with adjustable oxygen flow rates from 5 to 40 slm. A proprietary internal cell maximizes ozone output while minimizing oxygen consumption, a consistent gas supply for semiconductor oxidation, ALD/CVD precursor delivery, and advanced wafer surface treatment processes.

≤ 300 g O₃/Nm³5–40 slm O₂ FlowProprietary CellCE / ULSECS/GEM
System Overview

Ozone Generation, Engineered for Yield-Critical Process Gas

The Inquivix Technologies ozone gas generator produces high-concentration ozone gas from an oxygen feed using proprietary discharge cell technology. The system delivers ozone concentrations up to 300 g O₃/Nm³ with adjustable oxygen flow (5–40 slm) for precise process control, from high-concentration, low-flow semiconductor oxidation to higher-flow industrial sterilization.

01
Feed O₂
02
Cell Proprietary discharge
03
Output ≤ 300 g O₃/Nm³

The proprietary cell architecture is engineered to deliver maximum ozone conversion efficiency, reducing oxygen consumption per gram of ozone produced compared to conventional discharge designs.

Detail view of the proprietary discharge cell core inside an Inquivix Technologies ozone gas generator
Discharge Cell · OG-Series
Cell tech Proprietary
O₂ flow 5–40 slm
O₃ output ≤ 300 g/Nm³
Specifications

System-Level Output Specifications

Multiple configurations are available for varying concentration and flow requirements. Contact Inquivix Technologies for detailed specifications, system sizing, and utility requirements.

Datasheet OG-Series · Ozone Gas Generator
Rev · 2026 · OG-300
01 Ozone Concentration Up to 300 g O₃/Nm³ Adjustable via cell power
02 Oxygen Flow Rate 5 – 40 slm Process-tunable
03 Cell Technology Proprietary internal cell Long operational life
04 Certifications CE · UL EU + North America
05 Communication SECS/GEM compatible MES integration ready
Configurations

Sized to your process gas demand

We supply ozone gas generators across multiple concentration and flow ranges. Send your process parameters, we'll match cell capacity, oxygen feed, and exhaust handling to your fab utilities.

  • Concentration target (g/Nm³)
  • Flow demand (slm) per tool
  • Utility envelope & integration
System Features

Engineered Around the Discharge Cell

Four engineering choices that define Inquivix Technologies ozone gas generators, from the proprietary cell at the core, to the dual-certified envelope, to the SECS/GEM bridge into your fab's process control.

01
PROPRIETARY CELL

Proprietary Cell Technology

The Inquivix Technologies ozone gas generator uses a proprietary discharge cell that maximizes ozone generation efficiency while minimizing oxygen waste. High ozone concentrations are produced at lower power consumption per gram of ozone, reducing operating costs compared to conventional dielectric barrier discharge designs. Cell construction is engineered for long operational life with consistent output performance across extended production runs.

Conversion High-efficiency
Cell life Long operational
02
ADJUSTABLE

Adjustable Concentration and Flow Control

The variable oxygen flow (5–40 slm) combined with adjustable power settings provides precise control over both ozone concentration and total ozone mass flow. This flexibility allows a single ozone gas generator to serve multiple process applications, from high-concentration semiconductor oxidation requiring maximum ozone density to moderate-concentration sterilization and surface treatment operations.

O₂ flow 5 – 40 slm
Output g/Nm³ tunable
03
CE · UL

CE and UL Safety Certification

All Inquivix Technologies ozone gas generators carry both CE marking for European compliance and UL listing for North American safety standards. Dual certification enables worldwide deployment across semiconductor manufacturing facilities, pharmaceutical production environments, and industrial process installations.

Mark CE + UL
Deployment Worldwide
04
SECS/GEM

SECS/GEM Fab Integration

SEMI SECS/GEM communication protocol support enables automated integration with semiconductor fab Manufacturing Execution Systems (MES). Equipment status, ozone output parameters, alarm conditions, and operational data are communicated in real time for remote monitoring, automated reporting, and event-driven process control.

Protocol SECS/GEM
MES Real-time
Applications

Where Gas-Phase Ozone Delivers Process Value

From semiconductor oxidation and ALD/CVD precursor delivery to process chamber cleaning and surface passivation, Inquivix Technologies ozone gas generators support yield-critical process steps across advanced semiconductor fabrication.

Wafer in oxidation chamber with ozone-assisted oxide growth process
SEMI · OXIDE

Semiconductor Oxidation Processes

High-concentration ozone gas drives controlled oxide growth, gate dielectric formation, and surface oxidation in semiconductor manufacturing. Ozone-based oxidation provides superior oxide quality and uniformity compared to thermal oxidation methods at low-temperature processing nodes.

Display & semiconductor mfg.
Atomic layer deposition tool with ozone precursor line
SEMI · ALD/CVD

Semiconductor Film Forming

Ozone serves as an oxidant in atomic layer deposition (ALD) and chemical vapor deposition (CVD) for high-quality dielectric and oxide film formation. Precise concentration control enables repeatable film thickness and composition across production lots.

ALD / CVD precursor
Wafer dry-cleaning chamber using gas-phase ozone for organic residue removal
SEMI · LITHO

Lithography and Dry Cleaning

Ozone gas supplies lithography support operations and dry cleaning processes in semiconductor fabs. Gas-phase ozone provides effective organic and residue removal from wafer surfaces without generating the chemical waste streams associated with wet cleaning alternatives.

Dry cleaning · litho support
Semiconductor process chamber cleaning with ozone gas injection
SEMI · CHAMBER

Process Chamber Cleaning

Gas-phase ozone is used for in-situ and ex-situ semiconductor process chamber cleaning, oxidizing and desorbing organic and inorganic residues from chamber walls, showerheads, and susceptors. Ozone-based chamber cleaning extends preventive maintenance intervals and reduces particle contamination on product wafers.

Chamber clean · particle control
Wafer surface passivation process with ozone-controlled native oxide growth
SEMI · PASSIV

Wafer Surface Passivation & Native Oxide Control

Controlled native oxide growth using high-concentration ozone enables precise surface passivation for gate dielectric interfaces, metal contact pre-treatment, and advanced packaging substrate preparation. Ozone-based passivation offers superior oxide thickness uniformity compared to wet chemical alternatives.

Surface prep · gate dielectric · packaging
Process Integration

Engineering Support for Every Deployment

Inquivix Technologies provides process integration engineering for every ozone gas generator deployment, from gas delivery design, to safety system coordination, to SECS/GEM commissioning.

Get Started

Request Ozone Gas Generator Specifications

Whether you are specifying ozone gas generation for semiconductor wafer oxidation, ALD/CVD precursor delivery, or process chamber cleaning, our engineering team will evaluate your concentration, flow rate, and integration requirements to configure the right system.